一、基本信息
冯伟，教授，博士研究生导师
担任黑龙省化学学会理事会理事，SCI期刊Materials（JCR分区Q1）客座编辑，ACS Nano等多个国际著名期刊特约审稿人。
E-mail: wfeng@nefu.edu.cn
课题组网站：https://www.x-mol.com/groups/wfeng
二、教育经历
哈尔滨工业大学 材料物理于化学 博士学位 2012-2017
美国莱斯大学 纳米材料与工程系 联合培养博士 2015-2016
哈尔滨工业大学 物理化学 硕士学位 2010-2012
哈尔滨工业大学 应用化学 学士学位 2006-2010
三、工作经历
东北林业大学 澳门大三巴31888.com 教授，博导 2021.01-至今
东北林业大学 澳门大三巴31888.com 副教授，博导 2020.07-2020.12
东北林业大学 澳门大三巴31888.com 副教授，硕导 2017.09-2020.06
四、所在学科
化学，材料与化工
五、研究领域/方向
光电材料与器件；新能源材料与器件；柔性可穿戴电子器件；智能传感
主要从事纳米功能材料的合成及其在光电器件、新能源器件、柔性可穿戴器件和智能传感等领域的应用研究。迄今，在Advanced Materials, ACS Nano, Chemistry of Materials, ACS Applied Materials & Interfaces等国际著名期刊发表SCI论60余篇，引用次数达3400余次，H因子值为25。
六、科研项目
主持国家自然科学基金、黑龙江省优秀青年基金、中国博士后特别资助、中国博士后面上资助、黑龙江省博士后特别资助等多项纵向课题。参与国家重大科学基础研究973、国家自然科学基金重大研究计划和国家自然科学基金面上项目。
七、代表性学术论文
[1] Wei Feng, Wei Zheng, Wenwu Cao and PingAn Hu. “Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface.” Advanced Materials, 2014, 26, 6587-6593.（IF=30.849）
[2] Xuxuan Yang, Xin Liu, Lihang Qu, Feng Gao, Yi Xu, Mengqi Cui, Huan Yu, Yunxia Wang, PingAn Hu, Wei Feng*. Boosting photoresponse of self-powered InSe-based photoelectrochemical photodetectors via suppression of interface doping. ACS Nano, 2022, Accept. (IF=15.881)
[3] Yunxia Hu, Mingjin Dai, Wei Feng, Xin Zhang, Feng Gao, Shichao Zhang, Biying Tan, Jia Zhang, Yong Shuai, YongQing Fu, PingAn Hu. “Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes.” Advanced Materials, 2021, 33, 2104960. (IF=30.849)
[4] Xuxuan Yang, Lihang Qu, Feng Gao, Yunxia Hu, Huan Yu, Yunxia Wang, Mengqi Cui, Yunxiao Zhang, Zhendong Fu, Yuewu Huang,Wei Feng*, Bin Li, PingAn Hu. High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets. ACS Applied Materials & Interfaces, 2022, 14, 7175-7183. (IF=9.229)
[5] Qin, Fanglu; Gao, Feng; Dai, Mingjin; Hu, Yunxia; Yu, Miaomiao; Wang, Lifeng; Feng Wei*; Li, Bin; Hu, PingAn. “Multilayer InSe-Te van der Waals heterostructures with ultrahigh rectification ratio and ultrasensitive photoresponse” ACS Applied Materials & Interfaces, 2020, 12, 37313-37319. (IF=9.229)
[6] Miaomiao Yu, Yunxia Hu, Feng Gao, Mingjin Dai, Lifeng Wang, PingAn Hu, Wei Feng*. “High performance devices based on InSe-In1-xGaxSe van der Waals heterojunctions.” ACS Applied Materials & Interfaces, 2020, 12, 24978-24983. (IF=9.229)
[7] Wei Feng, Fanglu Qin, Miaomiao Yu, Feng Gao, Mingjin Dai, Yunxia Hu, Lifeng Wang, Juan Hou, Bin Li* and PingAn Hu*. “Synthesis of superlattice InSe nanosheets with enhanced electronic and optoelectronic performance”. ACS Appl. Mater. Interfaces, 2019, 11, 18511-18516. (IF=9.229)
[8] Miaomiao Yu, Hang Li, He Liu, Fanglu Qin, Feng Gao, Yunxia Hu, Mingjin Dai, Lifeng Wang, Wei Feng*, and PingAn Hu. “Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector”. ACS Appl. Mater. Interfaces, 2018, 10, 43299-43304. (IF=9.229)
[9] Wei Feng*, Feng Gao, Yunxia Hu, Mingjin Dai, He Liu, Lifeng Wang, and PingAn Hu. “Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets.” ACS Appl. Mater.
Interfaces, 2018, 10, 27584-27588. （IF= 9.229）
[10] Wei Feng, Wei Zheng, Feng Gao, XiaoShuang Chen, Guangbo Liu, Tawfique Hasan, WenWu Cao, PingAn Hu. “Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In2Se3.” Chemistry of Materials, 2016, 28(12): 4278-4283.（IF=9.890）
[11] Wei Feng, Wei Zheng, Xiaoshuang Chen, Guangbo Liu, Wenwu Cao and PingAn Hu. “Solid-state reaction synthesis of InSe/CuInSe2 lateral p-n heterojunction and application in high performance optoelectronic devices.” Chemistry of Materials, 2015, 27(3): 983-989. （IF=9.890）
八、专著与教材
出版学术专著1部，参与出版英文学术专著1部。
[1] 多层硒化铟及其异质结的电学和光电性能研究，冯伟，2020
[2] Growth and Optoelectronics of Two-dimensional Materials, PingAn Hu, Wei Feng, Jia Zhang, Wei Zheng, Xiaona Wang，2014
九、获奖/专利
[1] 黑龙江省高校科学技术奖一等奖，2019
[2] 英国皇家物理学会（IOP）Outstanding Reviewer Awards，2019
[3] 二维Ga1-xInxSe合金及其制备方法及在制备光电探测中的应用，ZL201811292091.5，冯伟，于苗苗，秦芳璐，刘赫
[4] 二维超晶格硒化铟及其制备方法及在制备光电探测中的应用，ZL201811235022.0，冯伟，刘赫，于苗苗，秦芳璐
[5] 一种通过电化学插层制备InSe薄膜的方法，ZL 202011489342.6，冯伟，杨绪轩，刘芝莹，屈栎杭
